 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| WMBT5551LT1 NPN Silicon Transistor 1 BASE 2 EMITTER Symbol VCEO VCBO VEBO IC Value Unit Vdc Vdc Vdc mAdc SOT- 23 (TO - 236AB) 1 2 COLLECTOR 3 3 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -- Continuous 160 180 6.0 600 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 Unit mW mW/C C/W mW mW/C RqJA TJ, Tstg - 55 to +150 C/W C DEVICE MARKING MMBT5550LT1 = M1F; MMBT5551LT1 = G1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage(3) (IC = 1.0 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter - Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 120 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0, TA = 100C) Emitter Cutoff Current (VEB = .0 Vdc, IC = 0) 5 IEBO -- 50 V(BR)CEO 160 V(BR)CBO 180 V(BR)EBO 6.0 ICBO -- -- -- -- nAdc 50 Adc 50 nAdc -- -- -- Vdc -- -- Vdc Vdc Wing Shing Computer Components Co., (H.K .)L td. Homepage: http: / / www.wingshing.com Tel: (8 52) 2341 9 27 6 Fax : (8 52) 27 9 7 8 153 E-mail: wsccltd@ hk star.com Motorola Small-Signal Transistors, FETs and Diodes Device Data 1 WMBT5551LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) hFE 80 (IC = 10 mAdc, VCE = 5.0 Vdc) 80 (IC = 50 mAdc, VCE = 5.0 Vdc) Collector - Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base - Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) -- -- -- 1.0 VCE(sat) -- -- -- 0.15 250 -- -- Vdc -- -- -- 80 0.20 Vdc 1.0 |
Price & Availability of WMBT5551LT1
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |